- 您現在的位置：買賣IC網 > PDF目錄48376 > AT-42010G (AGILENT TECHNOLOGIES INC) C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數資料
| 型號： | AT-42010G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, MICROSTRIP PACKAGE-4 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 52K |
| 代理商： | AT-42010G |
4-154
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
Features
High Output Power:
12.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1dB at 4.0 GHz
High Gain at
1 dB Compression:
14.0 dB Typical G1dBat 2.0 GHz
9.5 dB Typical G1dB at 4.0 GHz
Low Noise Figure:
1.9 dB Typical NFOat 2.0 GHz
High Gain-Bandwidth
Product: 8.0 GHz Typical fT
Hermetic Gold-ceramic
Microstrip Package
AT-42010
100 mil Package
Description
Hewlett-Packard’s AT-42010 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42010 is housed in a hermetic,
high reliability 100 mil ceramic
package. The 4 micron emitter-to-
emitter pitch enables this transis-
tor to be used in many different
functions. The 20 emitter finger
interdigitated geometry yields a
medium sized transistor with
impedances that are easy to match
for low noise and medium power
applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near
50
up to 1 GHz , makes this
device easy to use as a low noise
amplifier.
The AT-42010 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
5965-8910E
相關PDF資料 |
PDF描述 |
|---|---|
| AT-42070 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42070G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42086-TR1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42086-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42086-BLKG | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT42035 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42035 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42035-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42035G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-42035-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
發布緊急采購，3分鐘左右您將得到回復。