- 您現在的位置：買賣IC網 > PDF目錄357605 > AT-42035-BLK TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X PDF資料下載
參數資料
| 型號： | AT-42035-BLK |
| 英文描述： | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| 中文描述： | 晶體管|晶體管|叩| 12V的五（巴西）總裁| 80mA的一（c）|微X |
| 文件頁數： | 1/6頁 |
| 文件大小： | 56K |
| 代理商： | AT-42035-BLK |
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
Features
High Output Power:
21.0 dBm Typical P
1 dB
at 2.0 GHz
20.5 dBm Typical P
1 dB
at 4.0 GHz
High Gain at 1 dB
Compression:
14.0 dB Typical
G
1 dB
at 2.0 GHz
9.5 dB Typical
G
1 dB
at 4.0 GHz
Low Noise Figure:
1.9 dB Typical
NF
O
at 2.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
Cost Effective Ceramic
Microstrip Package
AT-42035
35 micro-X Package
Description
Agilent
’
s AT-42035 is a general
purpose NPN bipolar transistor
that offers excellent high
frequency performance. The
AT-42035 is housed in a cost
effective surface mount 100 mil
micro-X package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near
50
up to 1 GHz, makes this
device easy to use as a low noise
amplifier.
The AT-42035 bipolar transistor is
fabricated using Agilent
’
s 10 GHz f
T
Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
相關PDF資料 |
PDF描述 |
|---|---|
| AT-42035-TR1 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036 | General purpose transistor |
| AT-42036-BLK | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036-TR1 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT002N5-00 | 0.3 MHz - 3000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2 dB INSERTION LOSS-MAX |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT-42035G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-42035-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:General purpose transistor |
| AT-42036-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42036-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。