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參數(shù)資料
| 型號(hào)： | AT-42036-TR1G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, CERAMIC, MICROSTRIP-4 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 89K |
| 代理商： | AT-42036-TR1G |
Features
High output power:
21.0 dBm typical P
1 dB
at 2.0 GHz
20.5 dBm typical P
1 dB
at 4.0 GHz
High gain at 1 dB compression:
14.0 dB typical G
1 dB
at 2.0 GHz
9.5 dB typical G
1 dB
at 4.0 GHz
Low noise figure:
1.9 dB typical NF
O
at 2.0 GHz
High gain-bandwidth product:
8.0 GHz typical f
T
Cost effective ceramic microstrip
package
Lead-free Option Available
36 micro-X Package
Description
Agilent’s AT-42036 is a general
purpose NPN bipolar transistor that
offers excellent high frequency
performance. The AT-42036 is
housed in a cost effective surface
mount 100 mil micro-X package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 20 emitter finger interdigitated
geometry yields a medium sized
transistor with impedances that are
easy to match for low noise and
medium power applications. This
device is designed for use in low
noise, wideband amplifier, mixer
and oscillator applications in the
VHF, UHF, and microwave frequen-
cies. An optimum noise match near
50
up to 1 GHz, makes this device
easy to use as a low noise amplifier.
The AT-42036 bipolar transistor is
fabricated using Agilent’s 10 GHz
f
T
Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
Agilent AT-42036
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Data Sheet
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-42036-TR1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-BLKG | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-BLK | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42036-TR1 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42070 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT42070 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42070 | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT42085 | 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
| AT-42085 | 制造商:AVAGO 制造商全稱(chēng):AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42085G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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