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參數(shù)資料
| 型號： | AT-42085 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 71K |
| 代理商： | AT-42085 |
Agilent AT-42085 Up to 6 GHz
Medium Power Silicon Bipolar
Transistor
Data Sheet
Features
High Output Power:
20.5 dBm Typical P1 dB at 2.0 GHz
High Gain at 1 dB
Compression:
14.0 dB Typical G1 dB at 2.0 GHz
Low Noise Figure:
2.0 dB Typical NFO at 2.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical fT
Low Cost Plastic Package
Lead-free Option Available
85 Plastic Package
Description
Agilent’s AT-42085 is a general
purpose NPN bipolar transistor
that offers excellent high frequency
performance. The AT-42085 is
housed in a low cost .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. Applications
include use in wireless systems as
an LNA, gain stage, buffer, oscilla-
tor, and mixer. An optimum noise
match near 50
up to 1 GHz,
makes this device easy to use as a
low noise amplifier.
The AT-42085 bipolar transistor is
fabricated using Agilent’s 10 GHz
fT Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-42085G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42086-TR1G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42086-TR2G | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42086-BLKG | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-42086-TR2 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-42085G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT42086 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | FO-163 |
| AT-42086 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42086-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42086-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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