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參數資料
| 型號： | AT-64020 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/4頁 |
| 文件大小： | 184K |
| 代理商： | AT-64020 |
AT-64020
Up to 4 GHz Linear Power Silicon Bipolar Transistor
Data Sheet
Features
HighOutputPower:
27.5dBmTypicalP1dBat2.0GHz
26.5dBmTypicalP1dBat4.0GHz
HighGainat1dBCompression:
10.0dBTypicalG1dBat2.0GHz
6.5dBTypicalG1dBat4.0GHz
35%TotalEfficiency
EmitterBallastResistors
Hermetic,Metal/BerylliaPackage
200 mil BeO Package
Description
TheAT-64020isahighperformanceNPNsiliconbipolar
transistor housed in a hermetic BeO disk package for
goodthermalcharacteristics.Thisdeviceisdesignedfor
useinmediumpower,widebandamplifierandoscillator
applications operating over VHF, UHF and microwave
frequencies.
Excellentdeviceuniformity,performanceandreliability
are produced by the use of ion-implantation, self-
alignment techniques, and gold metallization in the
fabrication of these devices. The use of ion-implanted
ballast resistors ensures uniform current distribution
throughthemultipleemitterfingers.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AT64023 | 制造商:Hewlett Packard Co 功能描述: |
| AT-64023 | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT640283 | 制造商:MA/COM 功能描述:New |
| AT64035 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF TRANSISTOR |
| AT641TAT-8IN-TSCREEN |
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