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參數資料
| 型號： | AT002N5-11 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC-3 GHz |
| 中文描述： | 砷化鎵50分貝IC電壓可變衰減器的雙控制的DC - 3 GHz的 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 134K |
| 代理商： | AT002N5-11 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 3/99A
1
GaAs 50 dB IC Voltage Variable
Dual Control Attenuator DC–3 GHz
Features
I
50 dB Range
I
Low Insertion Loss
I
Fast Switching
I
Meets MIL-STD-883 Screening
Requirements
Description
The AT002N5-00 attenuator provides up to 50 dB variable
attenuation from DC–3 GHz under non-reflective
conditions.Attenuation can be controlled by varying each
of the two control bias voltages from 0 to -5 V.The control
current is less than 100
μ
A and the attenuator will operate
at 0 dBm with switching time, typically 10 ns.The chip is
configured using two “T”attenuators in the series and two
in parallel. This device may be used with a single bias
(V
1
= 0) but with reduced attenuation and match.
Applications include fast response AGC circuits requiring
high attenuation, such as for radar processing,
instrumentation, and levelers in RF equipment.
AT002N5-00
0
0.000
0.152
1.076
1.230
0.157
1.072
J
2
0
0
0
0
0
V
1
(ALT.)
0
0
0
GND
GND
V
2
(ALT.)
V
1
V
2
GND
0
1
0.614
GND
J
1
Chip Outline
Parameter
1
Frequency
2
DC–1.0 GHz
DC–2.0 GHz
DC–3.0 GHz
DC–1.0 GHz
DC–2.0 GHz
DC–3.0 GHz
DC–1.0 GHz
DC–2.0 GHz
DC–3.0 GHz
Min.
Typ.
1.2
1.6
1.8
52
50
48
Max.
1.4
1.8
2.0
Unit
dB
dB
dB
dB
dB
dB
Insertion Loss
Attenuation Range
50
48
45
VSWR (I/O)
1.3:1
1.5:1
1.8:1
Electrical Specifications at 25°C
Dimensions indicated in mm.
All bonding pads are 0.1 x 0.1 mm.
Chip thickness = 0.2 mm.
Parameter
Condition
Frequency
Min.
Typ.
10
15
20
±0.25
±0.50
±1.00
±2.00
±4.00
-4
0
Max.
Unit
ns
ns
mV
dB
dB
dB
dB
dB
dBm
dBm
Switching Characteristics
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru
0–10
11–20
21–30
31–40
41–50
1.0 dB
> 500 MHz
Attenuation Flatness
DC–3 GHz
Compression Point for all
Attenuation Levels
50 MHz–3 GHz
Control Voltages
V
Low
= 0 to -0.2 V @ 20 μA Max.
V
High
= -5 V @ 100 μA Max.
Operating Characteristics at 25°C
1. All measurements made in a 50
system, unless otherwise specified.
2. DC = 300 kHz.
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