- 您現在的位置：買賣IC網 > PDF目錄366587 > AT1228 (POSEICO SPA) PHASE CONTROL THYRISTOR PDF資料下載
參數資料
| 型號： | AT1228 |
| 廠商： | POSEICO SPA |
| 英文描述： | PHASE CONTROL THYRISTOR |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 44K |
| 代理商： | AT1228 |
PHASE CONTROL THYRISTOR
AT1228
Repetitive voltage up to
Mean on-state current
Surge current
3200
V
1275
A
20
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 06
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
3200
V
V
RSM
Non-repetitive peak reverse voltage
125
3300
V
V
DRM
Repetitive peak off-state voltage
125
3200
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
100
mA
I
DRM
CONDUCTING
I
T (AV)
Repetitive peak off-state current
V=VDRM
125
100
mA
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
1275
A
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
1100
A
I
TSM
Surge on-state current
sine wave, 10 ms
125
20
kA
I2 t
I2 t
without reverse voltage
2000 x1E3
A2s
V
T
On-state voltage
On-state current =
2900 A
25
2.5
V
V
T(TO)
Threshold voltage
125
1.2
V
r
T
On-state slope resistance
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
125
0.450
mohm
From 75% VDRM up to 1300A, gate 10V 5ohm
125
200
A/μs
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
125
1000
V/μs
td
Gate controlled delay time, typical
VD=100V, gate source 25V, 10 ohm , tr=.5 μs
25
1
μs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/μs linear up to 75% VDRM
200
μs
Q rr
Reverse recovery charge
di/dt=-20 A/μs, I= 870 A
125
μC
I rr
Peak reverse recovery current
VR= 50 V
A
I
H
Holding current, typical
VD=5V, gate open circuit
25
300
mA
I
L
Latching current, typical
VD=5V, tp=30μs
25
700
mA
GATE
V
GT
Gate trigger voltage
VD=5V
25
3.5
V
I
GT
Gate trigger current
VD=5V
25
300
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0.25
V
V
FGM
Peak gate voltage (forward)
30
V
I
FGM
Peak gate current
10
A
V
RGM
Peak gate voltage (reverse)
5
V
P
GM
Peak gate power dissipation
Pulse width 100 μs
150
W
P
G
Average gate power dissipation
MOUNTING
R
th(j-h)
Thermal impedance, DC
2
W
Junction to heatsink, double side cooled
21
°C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
6
°C/kW
T
j
F
Operating junction temperature
Mounting force
Mass
-30 / 125
22.0 / 24.5
520
°C
kN
g
ORDERING INFORMATION : AT1228 S 32
standard specification
VDRM&VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
相關PDF資料 |
PDF描述 |
|---|---|
| AT1228S32 | PHASE CONTROL THYRISTOR |
| AT202 | AC 2C 2#0 PIN RECP BOX |
| AT202S08 | PHASE CONTROL THYRISTOR |
| AT302 | PHASE CONTROL THYRISTOR |
| AT302S08 | Circular Connector; No. of Contacts:22; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:36; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:36-1 RoHS Compliant: No |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT1228P30 | 制造商:n/a 功能描述:Converter Thyristor |
| AT1228S32 | 制造商:POSEICO 制造商全稱:POSEICO 功能描述:PHASE CONTROL THYRISTOR |
| AT-1228-TT-R | 功能描述:揚聲器與變頻器 EM 85dB 2600H 1.5Vpp RoHS:否 制造商:PUI Audio 產品:Speakers 類型:Electromagnetic 頻率:900 Hz to 12 kHz 聲壓級:88 dBA 阻抗:8 Ohms 功率額定值:1.2 W 形狀:Round 端接類型:Solder Pad 直徑:15 mm 長度: 寬度: 深度:4.4 mm 磁體材料:Neodymium Iron Boran (NdFeB) 圓錐體材料:Mylar |
| AT1237TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| AT123S | 制造商:AME 制造商全稱:Analog Microelectronics 功能描述:PCI Arbiter |
發布緊急采購，3分鐘左右您將得到回復。