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參數資料
| 型號： | AT28C64E-20PJ |
| 廠商： | ATMEL CORP |
| 元件分類： | PROM |
| 英文描述： | 8K X 8 EEPROM 5V, 200 ns, PDIP28 |
| 封裝： | 0.600 INCH, PLASTIC, MS-011AB, DIP-28 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 318K |
| 代理商： | AT28C64E-20PJ |
1
Features
Fast Read Access Time – 120 ns
Fast Byte Write – 200 s or 1 ms
Self-timed Byte Write Cycle
– Internal Address and Data Latches
– Internal Control Timer
– Automatic Clear Before Write
Direct Microprocessor Control
– READY/BUSY Open Drain Output
– DATA Polling
Low Power
– 30 mA Active Current
– 100 A CMOS Standby Current
High Reliability
– Endurance: 10
4 or 105 Cycles
– Data Retention: 10 Years
5V
± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile elec-
trically erasable and programmable read only memory with popular, easy-to-use fea-
tures. The device is manufactured with Atmel’s reliable nonvolatile technology.
64K (8K x 8)
Parallel
EEPROMs
AT28C64
AT28C64X
Rev. 0001H–12/99
Pin Configurations
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
RDY/BUSY
Ready/Busy Output
NC
No Connect
DC
Don’t Connect
TSOP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
NC
WE
VCC
RDY/BUSY (or NC)
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
LCC, PLCC
Top View
Note: PLCC package pins 1 and 17 are
DON’T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
VSS
DC
I/O3
I/O4
I/O5
A7
A12
RDY/BUSY
(or
NC)
DC
VCC
WE
NC
(continued)
PDIP, SOIC
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
RDY/BUSY (or NC)
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AT28C64E-20SC | 功能描述:電可擦除可編程只讀存儲器 64K HI-ENDUR w/ RDYBSY 200NS RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28C64E-20SI | 功能描述:電可擦除可編程只讀存儲器 64K HI-ENDUR w/RDYBSY - 200NS RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28C64E-20TC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:64K 8K x 8 CMOS E2PROM |
| AT28C64E-20TI | 功能描述:電可擦除可編程只讀存儲器 64K HI-ENDUR w/RDYBSY - 200NS RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28C64E-25DC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
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