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參數資料
| 型號： | AT875LT |
| 廠商： | POSEICO SPA |
| 英文描述： | PHASE CONTROL THYRISTOR |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 43K |
| 代理商： | AT875LT |
PHASE CONTROL THYRISTOR
AT875
Repetitive voltage up to
Mean on-state current
Surge current
4400
V
2000
A
25.2
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 02
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
120
4400
V
V
RSM
Non-repetitive peak reverse voltage
120
4500
V
V
DRM
Repetitive peak off-state voltage
120
4400
V
I
RRM
Repetitive peak reverse current
V=VRRM
120
200
mA
I
DRM
CONDUCTING
I
T (AV)
Repetitive peak off-state current
V=VDRM
120
200
mA
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
2000
A
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
1520
A
I
TSM
Surge on-state current
sine wave, 10 ms
120
25.2
kA
I2 t
I2 t
without reverse voltage
3175 x1E3
A2s
V
T
On-state voltage
On-state current =
2000 A
25
2
V
V
T(TO)
Threshold voltage
120
1.3
V
r
T
On-state slope resistance
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
120
0.334
mohm
From 75% VDRM up to 1600 A, gate 10V 5ohm 120
200
A/μs
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
120
1000
V/μs
td
Gate controlled delay time, typical
VD=100V, gate source 40V, 10 ohm , tr=.5 μs
25
3
μs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/μs linear up to 75% VDRM
400
μs
Q rr
Reverse recovery charge
di/dt=-20 A/μs, I= 1050 A
120
μC
I rr
Peak reverse recovery current
VR= 50 V
A
I
H
Holding current, typical
VD=5V, gate open circuit
25
300
mA
I
L
Latching current, typical
VD=12V, tp=30μs
25
1000
mA
GATE
V
GT
Gate trigger voltage
VD=12V
25
3.5
V
I
GT
Gate trigger current
VD=12V
25
400
mA
V
GD
Non-trigger gate voltage, min.
VD=2000 V
120
0.8
V
V
FGM
Peak gate voltage (forward)
30
V
I
FGM
Peak gate current
10
A
V
RGM
Peak gate voltage (reverse)
10
V
P
GM
Peak gate power dissipation
Pulse width 100 μs
150
W
P
G
Average gate power dissipation
MOUNTING
R
th(j-h)
Thermal impedance, DC
2
W
Junction to heatsink, double side cooled
11
°C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
2
°C/kW
T
j
F
Operating junction temperature
Mounting force
Mass
-30 / 120
40.0 / 50.0
1700
°C
kN
g
ORDERING INFORMATION : AT875 S 44
standard specification
VDRM&VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
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