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參數(shù)資料
| 型號(hào)： | ATF-10236-TR1 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | CERAMIC, 36, MICRO-X-4 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 46K |
| 代理商： | ATF-10236-TR1 |
5-26
0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
Low Noise Figure:
0.8 dB Typical at 4 GHz
Low Bias:
VDS= 2 V, IDS= 20 mA
High Associated Gain:
13.0 dB Typical at 4 GHz
High Output Power: 20.0 dBm
Typical P1dBat 4 GHz
Cost Effective Ceramic
Microstrip Package
Tape-And-Reel Packaging
Option Available [1]
ATF-10236
36 micro-X Package
Description
The ATF-10236 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
low noise figure makes this device
appropriate for use in the first and
second stages of low noise amplifiers
operating in the 0.5-12 GHz frequency
range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NFO
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA
f = 2.0 GHz
dB
0.6
f = 4.0 GHz
dB
0.8
1.0
f = 6.0 GHz
dB
1.0
GA
Gain @ NFO; VDS = 2 V, IDS = 25 mA
f = 2.0 GHz
dB
16.5
f = 4.0 GHz
dB
12.0
13.0
f = 6.0 GHz
dB
10.5
P1 dB
Power Output @ 1 dB Gain Compression
f = 4.0 GHz
dBm
20.0
VDS = 4 V, IDS = 70 mA
G1 dB
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA
f = 4.0 GHz
dB
12.0
gm
Transconductance: VDS = 2 V, VGS = 0 V
mmho
80
140
IDSS
Saturated Drain Current: VDS = 2 V, VGS = 0 V
mA
70
130
180
VP
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA
V
-3.0
-1.3
-0.8
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5965-8697E
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