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參數資料
| 型號： | ATF-331M4-TR2 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | MINIPAK-4 |
| 文件頁數： | 1/16頁 |
| 文件大?。?/td> | 212K |
| 代理商： | ATF-331M4-TR2 |
Agilent ATF-331M4 Low Noise
Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Description
Agilent Technologies’s
ATF-331M4 is a high linearity,
low noise pHEMT housed in a
miniature leadless package.
The ATF-331M4’s small size and
low profile makes it ideal for the
design of hybrid modules and
other space-constraint devices.
Based on its featured perfor-
mance, ATF-331M4 is ideal for
the first or second stage of base
station LNA due to the excellent
combination of low noise figure
and enhanced linearity [1]. The
device is also suitable for appli-
cations in Wireless LAN,
WLL/RLL, MMDS, and other
systems requiring super low
noise figure with good intercept
in the 450 MHz to 10 GHz
frequency range.
Note:
1. From the same PHEMT FET family, the
smaller geometry ATF-34143 may also be
considered for the higher gain performance,
particularly in the higher frequency band
(1.8 GHz and up).
Features
Low noise figure
Excellent uniformity in product
specifications
1600 micron gate width
Miniature leadless package
1.4 mm x 1.2 mm x 0.7 mm
Tape-and-reel packaging option
available
Specifications
2 GHz; 4 V, 60 mA (Typ.)
0.6 dB noise figure
15 dB associated gain
19 dBm output power at 1 dB gain
compression
31 dBm output 3rd order intercept
Applications
Tower mounted amplifier, low noise
amplifier and driver amplifier for
GSM/TDMA/CDMA base stations
LNA for WLAN, WLL/RLL, MMDS
and wireless data infrastructures
General purpose discrete PHEMT for
other ultra low noise applications
MiniPak 1.4 mm x 1.2 mm Package
Pin Connections and
Package Marking
Note:
Top View. Package marking provides orientation,
product identification and date code.
“P” = Device Type Code
“x” = Date code character. A different
character is assigned for each month
and year.
Px
Source
Pin 3
Gate
Pin 2
Source
Pin 1
Drain
Pin 4
Px
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-331M4-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-331M4-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF34143 | 制造商:HP 制造商全稱:Agilent(Hewlett-Packard) 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143 | 制造商:Avago Technologies 功能描述:MOSFET RF SOT-343 |
| ATF34143BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-BLK | 制造商:Agilent Technologies 功能描述:JFET Transistor, N-Channel, SOT-343R |
| ATF-34143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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