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參數資料
| 型號： | ATF-34143-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數： | 1/15頁 |
| 文件大小： | 273K |
| 代理商： | ATF-34143-TR1 |
ATF-34143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Features
Lead-freeOptionAvailable
LowNoiseFigure
ExcellentUniformityinProductSpecifications
800micronGateWidth
LowCostSurfaceMountSmallPlasticPackage
SOT-343(4leadSC-70)
Tape-and-ReelPackagingOptionAvailable
Specifications
1.9 GHz; 4V, 60 mA (Typ.)
0.5dBNoiseFigure
17.5dBAssociatedGain
20dBmOutputPowerat1dBGainCompression
31.5dBmOutput3rdOrderIntercept
Applications
TowerMountedAmplifierandLowNoiseAmplifier
forGSM/TDMA/CDMABaseStations
LNAforWirelessLAN,WLL/RLLandMMDS
Applications
GeneralPurposeDiscretePHEMTforotherUltraLow
NoiseApplications
Surface Mount Package - SOT-343
Description
Avago’s ATF-34143 is a high dynamic range, low noise
PHEMThousedina4-leadSC-70(SOT-343)surfacemount
plasticpackage.
Basedonitsfeaturedperformance,ATF-34143isidealfor
the first stage of base station LNA due to the excellent
combinationoflownoisefigureandhighlinearity[1].The
device is also suitable for applications in Wireless LAN,
WLL/RLL, MMDS, and other systems requiring super low
noisefigurewithgoodinterceptinthe450MHzto10GHz
frequencyrange.
Note:
1. FromthesamePHEMTFETfamily,thelargergeometryATF-33143
mayalsobeconsideredeitherforthehigherlinearityperformance
or easier circuit design for stability in the lower frequency bands
(800– 900MHz).
Pin Connections and Package Marking
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
GATE
4P
x
SOURCE
DRAIN
SOURCE
Note: TopView.Packagemarkingprovides
orientationandidentification.
“4P”=Devicecode
“x”=Datecodecharacter.Anewcharacter
isassignedforeachmonth,year.
GATE
4P
x
SOURCE
DRAIN
SOURCE
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-34143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF34143TR2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF35076 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
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