- 您現在的位置：買賣IC網 > PDF目錄48377 > ATF-36077-TR1 KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數資料
| 型號： | ATF-36077-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 47K |
| 代理商： | ATF-36077-TR1 |
5-75
1
GATE
3
DRAIN
2
SOURCE
4
SOURCE
360
ATF-36077
2–18 GHz Ultra Low Noise
Pseudomorphic HEMT
Technical Data
Features
PHEMT Technology
Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
Low Parasitic Ceramic
Microstrip Package
Tape-and-Reel Packing
Option Available
Applications
12 GHz DBS LNB (Low Noise
Block)
4 GHz TVRO LNB (Low Noise
Block)
Ultra-Sensitive Low Noise
Amplifiers
Figure 1. ATF-36077 Optimum Noise
Figure and Associated Gain vs.
Frequency for VDS = 1.5 V, ID = 10 mA.
Pin Configuration
77 Package
NOISE
FIGURE
(dB)
0
FREQUENCY (GHz)
816
20
1.2
0.8
0.4
4
12
Ga
ASSOCIATED
GAIN
(dB)
NF
10
15
20
25
[1]
Note: 1. See Noise Parameter Table.
Description
Hewlett-Packard’s ATF-36077 is
an ultra-low-noise Pseudomorphic
High Electron Mobility Transistor
(PHEMT), packaged in a low
parasitic, surface-mountable
ceramic package. Properly
matched, this transistor will
provide typical 12 GHz noise
figures of 0.5 dB, or typical 4 GHz
noise figures of 0.3 dB. Addition-
ally, the ATF-36077 has very low
noise resistance, reducing the
sensitivity of noise performance
to variations in input impedance
match, making the design of
broadband low noise amplifiers
much easier. The premium
sensitivity of the ATF-36077
makes this device the ideal choice
for use in the first stage of
extremely low noise cascades.
The repeatable performance and
consistency make it appropriate
for use in Ku-band Direct Broad-
cast Satellite (DBS) Television
systems, C-band Television
Receive Only (TVRO) LNAs, or
other low noise amplifiers
operating in the 2-18 GHz
frequency range.
This GaAs PHEMT device has a
nominal 0.2 micron gate length
with a total gate periphery (width)
of 200 microns. Proven gold based
metalization systems and nitride
passivation assure rugged, reliable
devices.
5965-8726E
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-45100-GP6 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| ATF-45100-GP3 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| ATF-45100-GP1 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| ATF-58143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-58143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-36077-TRL | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Ultra Low Noise Pseudomorphic HEMT |
| ATF-36163 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF36163BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 3V V(BR)DSS | 40MA I(D) | SOT-363 |
| ATF-36163-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF-36163-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
發布緊急采購，3分鐘左右您將得到回復。