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參數(shù)資料
| 型號： | ATF-36163-BLKG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 6 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 174K |
| 代理商： | ATF-36163-BLKG |
ATF-36163
1.5 –18 GHz Surface Mount Pseudomorphic HEMT
Data Sheet
Features
Lead-free Option Available
Low Minimum Noise Figure:
1 dB Typical at 12 GHz
0.6 dB Typical at 4 GHz
Associated Gain:
9.4 dB Typical at 12 GHz
15.8 dB Typical at 4 GHz
Maximum Available Gain:
11 dB Typical at 12 GHz
17 dB Typical at 4 GHz
Low Cost Surface Mount Small Plastic Package
Tape-and-Reel Packaging Option Available
Applications
12 GHz DBS Downconverters
4 GHz TVRO Downconverters
S or L Band Low Noise Amplifiers
Description
The Avago ATF-36163 is a low-noise Pseudomorphic
High Electron MobilityTransistor (PHEMT), in the SOT-363
(SC-70) package. When optimally matched for minimum
noise figure, it will provide a noise figure of 1 dB at 12
GHz and 0.6 dB at 4 GHz.
Additionally, the ATF-36163 has low noise-resistance,
which reduces the sensitivity of noise performance to
variations in input impedance match. This feature makes
the design of broad band low noise amplifiers much
easier. The performance of the ATF-36163 makes this
device the ideal choice for use in the 2nd or 3rd stage
of low noise cascades. The repeatable performance and
consistency make it appropriate for use in Ku-band Direct
Broadcast Satellite (DBS) TV systems, C-band TV Receive
Only (TVRO) LNAs, Multichannel Multipoint Distribution
Systems (MMDS), X-band Radar detector and other low
noise amplifiers operating in the 1.5 –18 GHz frequency
range.
This GaAs PHEMT device has a nominal 0.2 micron gate
length with a total gate periphery (width) of 200 microns.
Proven gold-based metallization system and nitride
passivation assure rugged, reliable devices.
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and Package Marking
ATF-36163 Pin Conn
DRAIN
SOURCE
36x
SOURCE
GATE
SOURCE
Note: Top View. Package marking provides orientation and
identification.
“ 36 “ = Device code
“ x “ = Data code character
ATF-36163 Pkg
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
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| ATF-58143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-58143-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-36163-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-36163-G | 制造商:Avago Technologies 功能描述:Transistor,RF,PHEMT,9,5dB GA,ATF-36163 |
| ATF-36163-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT |
| ATF-36163-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-36163-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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