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參數資料
| 型號： | ATF-36163-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 6 PIN |
| 文件頁數： | 1/11頁 |
| 文件大小： | 110K |
| 代理商： | ATF-36163-TR1 |
ATF-36163
1.5 –18 GHz Surface Mount Pseudomorphic HEMT
Data Sheet
Features
Lead-free Option Available
Low Minimum Noise Figure:
1 dB Typical at 12 GHz
0.6 dB Typical at 4 GHz
Associated Gain:
9.4 dB Typical at 12 GHz
15.8 dB Typical at 4 GHz
Maximum Available Gain:
11 dB Typical at 12 GHz
17 dB Typical at 4 GHz
Low Cost Surface Mount Small Plastic Package
Tape-and-Reel Packaging Option Available
Applications
12 GHz DBS Downconverters
4 GHz TVRO Downconverters
S or L Band Low Noise Amplifiers
Surface Mount Package
SOT-363 (SC-70)
Description
The Avago ATF-36163 is a low-noise Pseudomorphic
High Electron Mobility Transistor (PHEMT), in the
SOT-363 (SC-70) package. When optimally matched for
minimum noise figure, it will provide a noise figure of
1 dB at 12 GHz and 0.6 dB at 4 GHz.
Additionally, the ATF-36163 has low noise-resistance,
which reduces the sensitivity of noise performance to
variations in input impedance match. This feature makes
the design of broad band low noise amplifiers much
easier. The performance of the ATF-36163 makes this
device the ideal choice for use in the 2nd or 3rd stage
of low noise cascades. The repeatable performance
and consistency make it appropriate for use in Ku-band
Direct Broadcast Satellite (DBS) TV systems, C-band
TV Receive Only (TVRO) LNAs, Multichannel Multipoint
Distribution Systems (MMDS), X-band Radar detector
and other low noise amplifiers operating in the 1.5 – 18
GHz frequency range.
This GaAs PHEMT device has a nominal 0.2 micron
gate length with a total gate periphery (width) of 200
microns. Proven gold-based metallization system and
nitride passivation assure rugged, reliable devices.
Pin Connections and Package Marking
DRAIN
SOURCE
36
SOURCE
GATE
SOURCE
Note:
Package marking provides orientation and identification.
Attention:
Observe precautions for handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
Refer to Avago Application Note A004R: Electrostatic Discharge
Damage and Control.
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-36163-TR2 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-BLK | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR2 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-36163-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-36163-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF38143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-38143 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SC-70 (SOT-343) Low Noise +22 dBm OIP3 |
| ATF-38143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
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