- 您現在的位置：買賣IC網 > PDF目錄42903 > ATF-50189-BLKG (AGILENT TECHNOLOGIES INC) C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數資料
| 型號： | ATF-50189-BLKG |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數： | 1/21頁 |
| 文件大小： | 165K |
| 代理商： | ATF-50189-BLKG |
Agilent ATF-50189 Enhancement
Mode
[1] Pseudomorphic HEMT in
SOT 89 Package
Data Sheet
Features
High Linearity and P1dB
Low Noise Figure
Excellent uniformity in product
specifications
SOT 89 standard package
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-Reel packaging option
available
Specifications
2 GH, 4.5V, 280 mA (Typ.)
45 dBm Output IP3
29 dBm Output Power at 1dB gain
compression
1.1 dB Noise Figure
15.5 dB Gain
62% PAE at P1dB
LFOM[4] 14 dB
Applications
Front-end LNA Q2 and Q3, Driver or
Pre-driver Amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
Driver Amplifier for WLAN, WLL/
RLL and MMDS applications
General purpose discrete E-pHEMT
for other high linearity applications
Pin Connections and
Package Marking
Notes:
Package marking provides orientation and
identification:
“0G” = Device Code
“x” = Month code indicates the month of
manufacture.
D = Drain
S = Source
G = Gate
Notes:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data
3. Conform to JEDEC reference outline MO229
for DRP-N
4. Linearity Figure of Merit (LFOM) is OIP3
divided by DC bias power.
Description
Agilent Technologies’s
ATF-50189 is a high linearity,
medium power, low noise
E-pHEMT FET packaged in a low
cost surface mount SOT89[3]
package. The combination of low
noise figure and high output IP3
at the same bias point makes it
ideal for receiver and transmitter
application. Its operating
frequency range is from 400 MHz
to 3.9 GHz.
The ATF-50189 is ideally suited
for Cellular/PCS and WCDMA
wireless infrastructure, WLAN,
WLL and MMDS application, and
general purpose discrete
E-pHEMT amplifiers which
require high linearity and power.
All devices are 100% RF and DC
tested.
OGX
Bottom View
DS
G
Top View
GS
D
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-50189-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-501P8-BLKG | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR1 | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR1G | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-501P8-TR2G | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-50189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-50189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF501P8 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
| ATF-501P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
發布緊急采購，3分鐘左右您將得到回復。