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參數資料
| 型號： | ATF-50189 |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁數： | 1/14頁 |
| 文件大小： | 667K |
| 代理商： | ATF-50189 |
ATF-50189
2.4 GHz high-linearity second stage LNA/ driver using ATF-50189
Application Note 5106
Introduction
AvagoTechnologies’ATF-50189isahighlinearity,medium
power,lownoiseE-pHEMTFETinalowcostsurfacemount
SOT89 package. It is suitable for high output IP3 LNA Q2
& Q3 stages or driver amplifier in receiver or transmitter
designs, respectively. This short note highlights a 2.4 GHz
amplifier that is suitable for adaptation into WLAN & ISM-
band products.
The ATF-50189 is packaged in an industry standard 4-lead
SOT-89. The package has two source leads with large sur-
faceareasforefficientheatdissipationandlowinductance
RF grounding.
This application note describes the use of the ATF-50189
in an extremely high dynamic range low noise amplifier
(LNA) or buffer amplifier. The demo-board’s nominal per-
formance at 2.4 GHz are: - G = 12.8 dB and output P1dB =
25dBm. With some optimization of the DC & RF operating
conditions, an output intercept point of 45dBm can be
easily achieved. The input and output return losses are
better than 12 dB.
EPHEMT biasing
Theenhancementmodetechnologyprovidessuperiorper-
formance while allowing a dc grounded source amplifier
with a single polarity power supply to be easily designed
and built. As opposed to a typical depletion mode PHEMT
where the gate must be made negative with respect to
the source for proper operation, an enhancement mode
PHEMT requires that the gate be made more positive than
the source for normal operation. Biasing an enhancement
mode PHEMT is as simple as biasing a bipolar transistor.
Insteadofa0.7Vbasetoemittervoltage,theenhancement
modePHEMTrequiresabouta0.6Vpotentialbetweenthe
gate and source, Vgs, for the target drain current, Ids.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-50189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-50189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-50189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF501P8 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
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