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參數資料
| 型號： | ATF-511P8-BLKG |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 139K |
| 代理商： | ATF-511P8-BLKG |
Agilent ATF-511P8 High Linearity
Enhancement Mode[1]
Pseudomorphic HEMT in
2x2 mm2 LPCC[3] Package
Data Sheet
Description
Agilent Technologies’s
ATF-511P8 is a single-voltage
high linearity, low noise
E-pHEMT housed in an 8-lead
JEDEC-standard leadless
plastic chip carrier (LPCC[3])
package. The device is ideal as
a high linearity, low-noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
The thermally efficient package
measures only 2 mm x 2 mm x
0.75 mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85
°C. All
devices are 100% RF & DC tested.
Features
Single voltage operation
High linearity and P1dB
Low noise figure
Excellent uniformity in product
specifications
Small package size:
2.0 x 2.0 x 0.75 mm
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-reel packaging option
available
Specifications
2 GHz; 4.5V, 200 mA (Typ.)
41.7 dBm output IP3
30 dBm output power at 1 dB gain
compression
1.4 dB noise figure
14.8 dB gain
12.1 dB LFOM[4]
69% PAE
Applications
Front-end LNA Q2 and Q3 driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
Driver amplifier for WLAN,
WLL/RLL and MMDS applications
General purpose discrete E-pHEMT
for other high linearity applications
Pin Connections and
Package Marking
Note:
Package marking provides orientation and
identification:
“1P” = Device Code
“x” = Date code indicates the month of
manufacture.
Note:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
1Px
Top View
Pin 8
Source
(Thermal/RF
Gnd)
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-511P8-TR2G | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-BLK | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR1 | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR2 | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR1G | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-511P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-511P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-52189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-52189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-52189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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