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參數資料
| 型號： | ATF-521P8-TR2G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 |
| 文件頁數： | 1/24頁 |
| 文件大小： | 248K |
| 代理商： | ATF-521P8-TR2G |
Agilent ATF-521P8 High Linearity
Enhancement Mode[1]
Pseudomorphic HEMT in
2x2 mm2 LPCC[3] Package
Data Sheet
Description
Agilent Technologies’s ATF-521P8 is a
single-voltage high linearity, low noise
E-pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier
(LPCC[3]) package. The device is ideal
as a medium-power, high-linearity am-
plifier. Its operating frequency range
is from 50 MHz to 6 GHz.
The thermally efficient package mea-
sures only 2mm x 2mm x 0.75mm. Its
backside metalization provides excel-
lent thermal dissipation as well as vi-
sual evidence of solder reflow. The
device has a Point MTTF of over 300
years at a mounting temperature of
+85
°C. All devices are 100% RF & DC
tested.
Features
Single voltage operation
High linearity and P1dB
Low noise figure
Excellent uniformity in product
specifications
Small package size:
2.0 x 2.0 x 0.75 mm3
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-reel packaging option
available
Specifications
2 GHz; 4.5V, 200 mA (Typ.)
42 dBm output IP3
26.5 dBm output power at 1 dB gain
compression
1.5 dB noise figure
17 dB Gain
12.5 dB LFOM[4]
Applications
Front-end LNA Q2 and Q3, driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
Driver amplifier for WLAN,
WLL/RLL and MMDS applications
General purpose discrete E-pHEMT
for other high linearity applications
Pin Connections and
Package Marking
Note:
Package marking provides orientation and
identification
“2P” = Device Code
“x” = Month code indicates the month of
manufacture.
Note:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data
3. Conform to JEDEC reference outline MO229
for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
2Px
Top View
Pin 8
Source
(Thermal/RF
Gnd)
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-521P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-TR2 | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-TR1 | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-BLK | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF524S16M | 制造商:n/a 功能描述:Inverter Semiconductor |
| ATF-53189 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Enhancement Mode Pseudomorphic HEMT in SOT 89 Package |
| ATF-53189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-53189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-53189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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