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參數資料
型號: ATF-54143-BLKG
廠商: AGILENT TECHNOLOGIES INC
元件分類: 小信號晶體管
英文描述: C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: PLASTIC, SC-70, 4 PIN
文件頁數: 1/17頁
文件大小: 212K
代理商: ATF-54143-BLKG
Agilent ATF-54143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
Description
Agilent Technologies’s ATF-54143
is a high dynamic range, low
noise, E-PHEMT housed in a
4-lead SC-70 (SOT-343) surface
mount plastic package.
The combination of high gain, high
linearity and low noise makes the
ATF-54143 ideal for cellular/PCS
base stations, MMDS, and other
systems in the 450 MHz to 6 GHz
frequency range.
Features
High linearity performance
Enhancement Mode Technology[1]
Low noise figure
Excellent uniformity in product
specifications
800 micron gate width
Low cost surface mount small
plastic package SOT-343 (4 lead SC-
70)
Tape-and-Reel packaging option
available
Lead-free option available.
Specifications
2 GHz; 3V, 60 mA (Typ.)
36.2 dBm output 3rd order intercept
20.4 dBm output power at 1 dB
gain compression
0.5 dB noise figure
16.6 dB associated gain
Applications
Low noise amplifier for cellular/PCS
base stations
LNA for WLAN, WLL/RLL and
MMDS applications
General purpose discrete E-PHEMT
for other ultra low noise applications
Note:
1. Enhancement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
Surface Mount Package
SOT-343
Pin Connections and
Package Marking
SOURCE
DRAIN
GATE
SOURCE
4Fx
Note:
Top View. Package marking provides orientation
and identification
“4F” = Device Code
“x” = Date code character
identifies month of manufacture.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
相關PDF資料
PDF描述
ATF-54143-TR1G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-541M4-TR1G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-541M4-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關代理商/技術參數
參數描述
ATF-54143-TR1 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
ATF-54143-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-54143-TR2 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-541M4 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
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