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參數(shù)資料
| 型號(hào)： | ATF-551M4-BLK |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 |
| 文件頁(yè)數(shù)： | 1/23頁(yè) |
| 文件大?。?/td> | 406K |
| 代理商： | ATF-551M4-BLK |
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ATF-551M4
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Miniature Leadless Package
Data Sheet
Description
Avago Technologies’ ATF-551M4 is a high dynamic
range, super low noise, single supply E-pHEMT GaAs FET
housed in a thin miniature leadless package.
The combination of small device size, super low noise
(under 1 dB Fmin from 2 to 6 GHz), high linearity and
low power makes the ATF-551M4 ideal for LNA or hybrid
module designs in wireless receiver in the 450 MHz to
10 GHz frequency band.
Applications include Cellular/PCS/ WCDMA handsets
and data modem cards, fixed wireless infrastructure
in the 2.4, 3.5 GHz and UNII frequency bands, as well
as 2.4 GHz 802.11b, 5 GHz 802.11a and HIPERLAN/2
Wireless LAN PC-cards.
Note:
1. Avago’s enhancement mode E-pHEMT devices are the first com-
mercially available single-supply GaAs transistors that do not need
a negative gate bias voltage for operation. They can help simplify
the design and reduce the cost of receivers and transmitters in many
applications in the 450 MHz to 10 GHz frequency range.
Features
Very low noise figure and high linearity
Single Supply Enhancement Mode Technology[1]
optimized for 3V operation
Excellent uniformity in product specifications
400 micron gate width
Thin miniature package 1.4 mm x 1.2 mm x 0.7 mm
Tape-and-reel packaging option available
Specifications
2 GHz; 2.7V, 10 mA (typ.)
24.1 dBm output 3rd order intercept
14.6 dBm output power at 1 dB gain compression
0.5 dB noise figure
17.5 dB associated gain
Applications
Low Noise Amplifier for:
– Cellular/PCS/WCDMA handsets and modem cards
– 2.4 GHz, 3.5 GHz and UNII fixed wireless infrastructure
– 2.4 GHz 802.11b Wireless LAN
– 5 GHz 802.11a and HIPERLAN Wireless LAN
General purpose discrete E-pHEMT for other ultra low
noise applications
MiniPak 1.4mm x 1.2 mm Package
Pin Connections and Package Marking
Note:
Top View. Package marking provides orientation, product identifica-
tion and date code.
“V” = Device Type Code
“x” = Date code character. A different character is assigned for each
month and year.
Source
Pin 3
Gate
Pin 2
Source
Pin 1
Drain
Pin 4
Vx
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| AUIRF1010EZS | 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF1010EZSTRR | 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF1010EZ | 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-551M4-BLK | 制造商:Avago Technologies 功能描述:Transistor |
| ATF-551M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-551M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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