- 您現在的位置：買賣IC網 > PDF目錄36759 > ATF-58143-BLK (AGILENT TECHNOLOGIES INC) C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數資料
| 型號： | ATF-58143-BLK |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 149K |
| 代理商： | ATF-58143-BLK |
Agilent ATF-58143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
Description
Agilent Technologies’s
ATF-58143 is a high dynamic
range, low noise E-PHEMT
housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
The combination of high gain,
high linearity and low noise
makes the ATF-58143 ideal as
low noise amplifier for cellular/
PCS/WCDMA base stations,
wireless local loop, and other
applications that require low
noise and high linearity perfor-
mance in the 450 MHz to 6 GHz
frequency range.
Features
Low noise and high linearity
performance
Enhancement Mode Technology[1]
Excellent uniformity in product
specifications
Low cost surface mount small
plastic package SOT-343 (4 lead
SC-70) in Tape-and-Reel packaging
option available
Lead-free option available
Specifications
2 GHz; 3V, 30 mA (Typ.)
30.5 dBm output 3rd order intercept
19 dBm output power at 1 dB
0.5 dB noise figure
16.5 dB associated gain
Applications
Q1 LNA for cellular/PCS/WCDMA
base stations
Q1, Q2 LNA and Pre-driver
amplifier for 3–4 GHz WLL
Other low noise and high linearity
applications at 450 MHz to 6 GHz
Note:
1. Enhancement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
Surface Mount Package
SOT-343
Pin Connections and
Package Marking
SOURCE
DRAIN
GATE
SOURCE
8Fx
Note:
Top View. Package marking provides orientation
and identification
“8F” = Device Code
“x” = Date code character
identifies month of manufacture.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-58143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATP106 | 30 A, 40 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP107 | 50 A, 40 V, 0.017 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP108 | 70 A, 40 V, 0.0104 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP108 | 70 A, 40 V, 0.0104 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-58143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-58143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
發布緊急采購，3分鐘左右您將得到回復。