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參數資料
| 型號： | ATP207 |
| 元件分類： | JFETs |
| 英文描述： | 65 A, 40 V, 0.0091 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 255K |
| 代理商： | ATP207 |
ATP207
No. A1319-1/4
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
Low ON-resistance.
Large current.
Slim package.
4.5V drive.
Halogen free compliance.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
40
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
65
A
Drain Current (PW≤10μs)
IDP
PW≤10μs, duty cycle≤1%
195
A
Allowable Power Dissipation
PD
Tc=25°C50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
35
mJ
Avalanche Current *2
IAV
33
A
Note :
*1 VDD=10V, L=50μH, IAV=33A
*2 L≤50μH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
40
V
Zero-Gate Voltage Drain Current
IDSS
VDS=40V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Marking : ATP207
Continued on next page.
Ordering number : ENA1319
91708PA TI IM TC-00001572
SANYO Semiconductors
DATA SHEET
ATP207
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
www.semiconductor-sanyo.com/network
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ATP207_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP207-S-TL-H | 功能描述:MOSFET N-CH 40V 65A ATPAK 制造商:on semiconductor 系列:- 包裝:帶卷（TR） 零件狀態:上次購買時間 FET 類型:- FET 功能:- 漏源極電壓（Vdss）:- 電流 - 連續漏極（Id）（25°C 時）:- 不同?Id，Vgs 時的?Rds On（最大值）:- 不同 Id 時的 Vgs（th）（最大值）:- 不同 Vgs 時的柵極電荷（Qg）:- 不同 Vds 時的輸入電容（Ciss）:- 功率 - 最大值:- 工作溫度:150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:ATPAK（2 引線 + 接片） 供應商器件封裝:ATPAK 標準包裝:3,000 |
| ATP207-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP208 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP208_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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