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參數資料
| 型號： | ATP218TL |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 393K |
| 代理商： | ATP218TL |
ATP218
No.8970-1/4
Features
ON-resistance RDS(on)1=2.9mΩ(typ.)
Input Capacitance Ciss=6600pF(typ.)
2.5V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
100
A
Drain Current (PW≤10μs)
IDP
PW≤10μs, duty cycle≤1%
300
A
Allowable Power Dissipation
PD
Tc=25°C60
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
235
mJ
Avalanche Current *2
IAV
50
A
Note :
*1 VDD=15V, L=100μH, IAV=50A
*2 L≤100μH, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
Ordering number : EN8970
51111PA TKIM TC-00002592
SANYO Semiconductors
DATA SHEET
ATP218
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
Package
: ATPAK
JEITA, JEDEC
: -
Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
Electrical Connection
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.7
0.4
0.55
9.5
7.3
0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4
2.6
4.6
0.4
0.1
2.3
TL
ATP218
LOT No.
1
3
2,4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ATP218-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP22 | 制造商:AMERICAN DJ 功能描述:STACKABLE EQUIPMENT CASE 22 X 12 X 15 INCH |
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| ATP22ASM | 制造商:CTS 制造商全稱:CTS Corporation 功能描述:Surface Mount Quartz Crystal |
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