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參數資料
| 型號： | ATT3020 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | FPGA |
| 英文描述： | Field-Programmable Gate Arrays |
| 中文描述： | 現場可編程門陣列 |
| 文件頁數： | 50/80頁 |
| 文件大小： | 528K |
| 代理商： | ATT3020 |
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Data Sheet
February 1997
ATT3000 Series Field-Programmable Gate Arrays
50
Lucent Technologies Inc.
Package Thermal Characteristics
When silicon die junction temperature is below the rec-
ommended junction temperature of 125 °C, the
temperature-activated failure mechanisms are mini-
mized. There are four major factors that affect the ther-
mal resistance value: silicon device size/paddle size,
board-mounting configuration (board density, multilayer
nature of board), package type and size, and system
airflow over the package. The values in the table below
reflect the capability of the various package types to
dissipate heat at given airflow rates. The numbers rep-
resent the delta °C/W between the ambient tempera-
ture and the device junction temperature.
To test package thermal characteristics, a single pack-
age containing a 0.269 in. sq. test IC of each configura-
tion is mounted at the center of a printed-circuit board
(PCB) measuring 8 in. x 13 in. x 0.062 in. The assem-
bled PCB is mounted vertically in the center of the rect-
angular test section of a wind tunnel. The walls of the
wind tunnel simulate adjacent boards in the electronic
rack and can be adjusted to study the effects of PCB
spacing. Forced air at room temperature is supplied by
a pair of push-pull blowers which can be regulated to
supply the desired air velocities. The air velocity is
measured with a hot-wire anemometer at the center of
the channel, 3 in. upstream from the package.
A typical test consists of regulating the wind tunnel
blowers to obtain the desired air velocity and applying
power to the test IC. The power to the IC is adjusted
until the maximum junction temperature (as measured
by its diodes) reaches 115 °C to 120 °C. The thermal
resistance
Θ
JA
(°C/W) is computed by using the power
supplied to the IC, junction temperature, ambient tem-
perature, and air velocity:
where:
T
J
= peak temperature on the active surface of the IC
T
A
= ambient air temperature
Q
C
= IC power
The tests are repeated at several velocities from 0 fpm
(feet per minute) to 1000 fpm.
The definition of the junction to case thermal resistance
Θ
JC
is:
where:
T
C
= temperature measured to the thermocouple at
the top dead center of the package
The actual
Θ
JC
measurement performed at Lucent,
Θ
J – TDC
, uses a different package mounting arrange-
ment than the one defined for
Θ
JC
in MIL-STD-883D
and SEMI standards. Please contact Lucent for a dia-
gram.
The maximum power dissipation for a package is cal-
culated from the maximum junction temperature, maxi-
mum operating temperature, and the junction to
ambient characteristic
Θ
JA
. The maximum power dissi-
pation for commercial grade ICs is calculated as fol-
lows: max power (watts) = (125 °C – 70 °C) x (1/
Θ
JA
),
where 125 °C is the maximum junction temperature.
Table 17 lists the ATT3000 plastic package thermal
characteristics.
Θ
JA
J
T
T
A
–
Q
C
=
Θ
JC
J
T
T
C
–
Q
C
=
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