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參數資料
| 型號： | AUIRF1404ZSTRR |
| 元件分類： | JFETs |
| 英文描述： | 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, D2PAK-3 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 362K |
| 代理商： | AUIRF1404ZSTRR |
02/19/2010
www.irf.com
1
AUTOMOTIVE GRADE
PD - 97460
HEXFET Power MOSFET
Description
Specifically designed for Automotive applications,
this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
AUIRF1404Z
AUIRF1404ZS
AUIRF1404ZL
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Features
l
Advanced Process Technology
l
Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
S
D
G
GD
S
Gate
Drain
Source
D2Pak
AUIRF1404ZS
TO-220AB
AUIRF1404Z
TO-262
AUIRF1404ZL
S
D
G
D
S
D
G
D
S
D
G
D
V(BR)DSS
40V
RDS(on) max.
3.7m
ID (Silicon Limited)
180An
ID (Package Limited)
160A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
l
–––
0.75
k
°C/W
RθCS
Case-to-Sink, Flat Greased Surface
i
0.50
–––
RθJA
Junction-to-Ambient
i
–––
62
RθJA
Junction-to-Ambient (PCB Mount)
j
–––
40
-55 to + 175
300
10 lbf
yin (1.1Nym)
200
1.3
± 20
Max.
180
n
120
710
160
480
330
See Fig.12a, 12b, 15, 16
相關PDF資料 |
PDF描述 |
|---|---|
| AUIRF1404ZSTRL | 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF1404Z | 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AUIRF1404ZL | 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRF1404ZS | 160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1404 | 160 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRF1405 | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1405 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 75A TO-22 |
| AUIRF1405ZL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1405ZL-308 | 功能描述:MOSFET AUTOMOTIVE MOSFET 55V 75A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1405ZS | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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