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參數(shù)資料
| 型號： | AUIRF2607ZTRR |
| 元件分類： | JFETs |
| 英文描述： | 42 A, 75 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 282K |
| 代理商： | AUIRF2607ZTRR |
08/24/10
www.irf.com
1
AUTOMOTIVE MOSFET
AUIRFR2607Z
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliabledeviceforuseinAutomotiveapplicationsandawide
variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
S
D
G
D-Pak
AUIRFR2607Z
GD
S
Gate
Drain
Source
S
D
G
D
HEXFET Power MOSFET
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
d
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.38
RθJA
Junction-to-Ambient (PCB mount)
i
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
110
0.72
± 20
45
k
32
180
42
96
See Fig.12a, 12b, 15, 16
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
75V
RDS(on) typ.
17.6m
max.
22m
ID (Silicon Limited)
45A k
ID (Package Limited)
42A
PD - 96323
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