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參數(shù)資料
| 型號： | AUIRF2804S |
| 元件分類： | JFETs |
| 英文描述： | 270 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, D2PAK-3 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 376K |
| 代理商： | AUIRF2804S |
AUIRF2804
AUIRF2804S
AUIRF2804L
HEXFET Power MOSFET
02/19/10
www.irf.com
1
AUTOMOTIVE GRADE
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
S
D
G
GD
S
Gate
Drain
Source
D2Pak
AUIRF2804S
TO-220AB
AUIRF2804
TO-262
AUIRF2804L
S
D
G
D
S
D
G
D
S
D
G
D
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
40V
RDS(on) typ.
1.5m
k
max. 2.0m
k
ID (Silicon Limited) 270A c
ID (Package Limited) 195A
PD -96290
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
e
EAS (tested)
Single Pulse Avalanche Energy Tested Value
e
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
d
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
l
–––
0.50
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
j
–––
40
Max.
270
c
190
1080
195
10 lbfin (1.1Nm)
300
2.0
± 20
540
1160
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
A
°C
mJ
°C/W
相關PDF資料 |
PDF描述 |
|---|---|
| AUIRF2804STRL | 270 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF2805STRL | 75 A, 55 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF2805S | 75 A, 55 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF2805L | 75 A, 55 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRF2805STRR | 75 A, 55 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRF2804S-7P | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF2804STRL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF2804STRL7P | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF2804STRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF2804STRR7P | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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