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參數資料
型號: AUIRF3805S-7P
元件分類: JFETs
英文描述: 160 A, 55 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, PLASTIC, D2PAK-7
文件頁數: 1/14頁
文件大?。?/td> 306K
代理商: AUIRF3805S-7P
AUIRF3805S-7P
AUIRF3805L-7P
HEXFET Power MOSFET
07/20/10
www.irf.com
1
PD - 96318
AUTOMOTIVE GRADE
D2Pak 7 Pin
AUIRF3805S-7P
GD
S
Gate
Drain
Source
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
TO-263CA 7 Pin
AUIRF3805L-7P
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating.
These features combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
V(BR)DSS
55V
RDS(on) typ.
2.0m
max. 2.6mi
ID
240A
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the
device. These are stress ratings only; and functional operation of the device at these or any other condition
beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
D
GS
SS
S
D
G
S S
S
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, V
GS @ 10V
ID @ TC = 100°C Continuous Drain Current, V
GS @ 10V
ID @ TC = 25°C Continuous Drain Current, V
GS @ 10V (Package Limited)
IDM
Pulsed Drain Current
c
PD @TC = 25°C Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
j
EAS (tested)
Single Pulse Avalanche Energy Tested Value
d
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
h
–––
0.50
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
g
–––
40
10 lbfin (1.1Nm)
300
2.0
± 20
440
680
See Fig.12a,12b,15,16
300
-55 to + 175
2.3
Max.
240
170
1000
160
A
°C
mJ
°C/W
相關PDF資料
PDF描述
AUIRF3805S-7PTRR 160 A, 55 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF3805S-7PTRL 160 A, 55 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF3805L-7P 160 A, 55 V, N-CHANNEL, Si, POWER, MOSFET
AUIRF3805STRR 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF3805S 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關代理商/技術參數
參數描述
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AUIRF3805STRL 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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