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參數資料
| 型號： | AUIRF4104S |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, D2PAK-3 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 349K |
| 代理商： | AUIRF4104S |
3/29/10
www.irf.com
1
HEXFET Power MOSFET
Features
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D2Pak
AUIRF4104S
TO-220AB
AUIRF4104
AUIRF4104S
PD - 97471A
AUTOMOTIVE GRADE
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
V(BR)DSS
40V
RDS(on) typ.
4.3m
Ω
max.
5.5m
Ω
ID (Silicon Limited)
120A
k
ID (Package Limited)
75A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested )
Single Pulse Avalanche Energy Tested Value
g
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
j
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
i
–––
1.05
°C/W
RθCS
Case-to-Sink, Flat Greased Surface
0.50
–––
RθJA
Junction-to-Ambient (PCB Mount)
–––
40
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
140
0.95
± 20
Max.
120
k
84
k
470
75
220
120
See Fig.12a, 12b, 15, 16
Note
to are on page 3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRF4104STRL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 1.4mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF4104STRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 1.4mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF44VZSTRL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE GRADE |
| AUIRF4905 | 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 20mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF4905L | 功能描述:MOSFET Auto Q101 -55V P-Ch HEXFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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