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參數資料
| 型號： | AUIRF7343QTR |
| 元件分類： | JFETs |
| 英文描述： | 4.7 A, 55 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數： | 1/13頁 |
| 文件大?。?/td> | 221K |
| 代理商： | AUIRF7343QTR |
HEXFET Power MOSFET
12/06/10
AUIRF7343Q
Description
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
www.irf.com
1
Features
l
Advanced Planar Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
150°C Operating Temperature
l
Automotive [Q101] Qualified*
l
Lead-Free, RoHS Compliant
Specifically designed for Automotive applications, these
HEXFET Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
SO-8
PD - 96343
AUTOMOTIVE MOSFET
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
GD
S
Gate
Drain
Source
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
N-Ch
P-Ch
V(BR)DSS
55V
-55V
RDS(on) typ. 0.043 0.095
max. 0.095 0.105
ID
4.7A
-3.4A
Units
N-Channel
P-Channel
VDS
Drain-Source Voltage
55
-55
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
4.7
-3.4
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
3.8
-2.7
IDM
Pulsed Drain Current
c
38
-27
PD @TA = 25°C
Power Dissipation
g
PD @TA = 70°C
Power Dissipation
g
EAS
Single Pulse Avalanche Energy
e
72
114
mJ
IAR
Avalanche Current
4.7
-3.4
A
EAR
Repetitive Avalanche Energy
mJ
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery dv/dt
d
5.0
-5.0
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
g
–––
62.5
°C/W
Parameter
2.0
1.3
Max.
W
0.20
A
°C
± 20
-55 to + 150
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相關代理商/技術參數 |
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|---|---|
| AUIRF7379Q | 功能描述:MOSFET AUTO 30V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7379QTR | 功能描述:MOSFET AUTO 30V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7416Q | 功能描述:MOSFET AUTO -30V 1 P-CH HEXFET 20mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7416QTR | 功能描述:MOSFET AUTO -30V 1 P-CH HEXFET 20mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7416QTRPBF | 制造商:International Rectifier 功能描述: |
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