- 您現在的位置：買賣IC網 > PDF目錄42906 > AUIRF7665S2TR1 4.1 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | AUIRF7665S2TR1 |
| 元件分類： | JFETs |
| 英文描述： | 4.1 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2 |
| 文件頁數： | 1/11頁 |
| 文件大?。?/td> | 342K |
| 代理商： | AUIRF7665S2TR1 |
Description
The AUIRF7665S2TR/TR1 combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
www.irf.com
1
01/05/10
AUIRF7665S2TR
AUIRF7665S2TR1
PD - 96286
AUTOMOTIVE GRADE
DirectFET
ISOMETRIC
SB
HEXFET is a registered trademark of International Rectifier.
Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 100W per Channel into 8 with No Heatsink
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
SB
SC
M2
M4
L4
L6
L8
V(BR)DSS
100V
RDS(on) typ.
51m
max.
62m
RG (typical)
3.5
Qg (typical)
8.3nC
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
f
PD @TC = 25°C
Power Dissipation
f
PD @TA = 25°C
Power Dissipation
e
EAS
Single Pulse Avalanche Energy (Thermally Limited)
h
EAS(tested)
Single Pulse Avalanche Energy (Tested Value)
h
IAR
Avalanche Current
g
A
EAR
Repetitive Avalanche Energy
g
mJ
TP
Peak Soldering Temperature
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
e
–––
63
RθJA
Junction-to-Ambient
j
12.5
–––
RθJA
Junction-to-Ambient
k
20
–––
RθJ-Can
Junction-to-Can
fl
–––
5.0
RθJ-PCB
Junction-to-PCB Mounted
1.4
–––
Linear Derating Factor
f
W/°C
°C/W
V
A
W
°C
mJ
-55 to + 175
0.2
2.4
37
See Fig. 18a,18b,16,17
56
270
30
Max.
10.2
77
58
100
± 20
14.4
4.1
相關PDF資料 |
PDF描述 |
|---|---|
| AUIRF7665S2TR | 4.1 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF7665S2TR | 4.1 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF7665S2TR1 | 4.1 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF7675M2TR1 | 4.4 A, 150 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF7675M2TR | 4.4 A, 150 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRF7669L2TR | 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7669L2TR 1 | 制造商:International Rectifier 功能描述:AUIRF7669L2TR1 - MOSFET,,N CH,100V,375A,DIRECTFET,L8 |
| AUIRF7669L2TR1 | 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7675M2TR | 功能描述:MOSFET 150V AUTO GRD 1 N-CH HEXFET DIRECTFET M2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF7675M2TR1 | 功能描述:MOSFET 150V AUTO GRD 1 N-CH HEXFET DIRECTFET M2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。