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參數資料
| 型號： | AUIRFR2405 |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 200K |
| 代理商： | AUIRFR2405 |
AUIRFR2405
HEXFET Power MOSFET
06/23/11
www.irf.com
1
PD - 97688
AUTOMOTIVE GRADE
S
D
G
GD
S
Gate
Drain
Source
D-Pak
AUIRFR2405
G
S
D
Features
l
Advanced Planar Technology
●
Dynamic dV/dT Rating
l
Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allow
ed
up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This ben-
efit combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.4
RθJA
Junction-to-Ambient (PCB Mount)
i
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
5.0
11
130
34
110
0.71
± 20
Max.
56
h
40
h
220
30
-55 to + 175
300
V(BR)DSS
55V
RDS(on) typ.
11.8m
Ω
max
16m
Ω
ID (Silicon Limited)
56Ah
ID (Package Limited)
30A
相關PDF資料 |
PDF描述 |
|---|---|
| AUIRFR2405TRL | 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR2405TRR | 30 A, 55 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR2905ZSTRR | 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR2905Z | 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR2905ZSTRL | 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRFR2405 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 30A TO-25 |
| AUIRFR2405TR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR2405TRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR2405TRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR2407 | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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