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參數資料
| 型號： | AUIRFR3504TRL |
| 元件分類： | JFETs |
| 英文描述： | 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 224K |
| 代理商： | AUIRFR3504TRL |
AUIRFR3504
HEXFET Power MOSFET
07/06/11
www.irf.com
1
PD - 97687
S
D
G
GD
S
Gate
Drain
Source
D-Pak
AUIRFR3504
G
S
D
AUTOMOTIVE GRADE
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
175°COperatingTemperature
l
Fast Switching
l
FullyAvalancheRated
l
RepetitiveAvalancheAllow
ed
up to Tjmax
l
Lead-Free, RoHS Compliant
l
AutomotiveQualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
40V
RDS(on) typ.
7.8m
Ω
max
9.2m
Ω
ID (Silicon Limited)
87Aj
ID (Package Limited)
56A
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested )
Single Pulse Avalanche Energy Tested Value
i
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
l
–––
1.09
RθJA
Junction-to-Ambient (PCB Mount)
k
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
-55 to + 175
300
140
0.92
± 20
Max.
87
j
61
j
350
56
480
240
See Fig. 12a, 12b, 15, 16
相關PDF資料 |
PDF描述 |
|---|---|
| AUIRFR3504 | 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR3504TRR | 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR3504TR | 56 A, 40 V, 0.0092 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR3504Z | 42 A, 40 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR3504ZTRL | 42 A, 40 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRFR3504TRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR3504Z | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR3504ZTR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR3504ZTRL | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR3504ZTRR | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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