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參數(shù)資料
| 型號(hào)： | AUIRFR4105 |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 238K |
| 代理商： | AUIRFR4105 |
AUIRFR4105
HEXFET Power MOSFET
07/05/11
PD - 97597A
www.irf.com
1
AUTOMOTIVEGRADE
Features
●
Advanced Planar Technology
●
Low On-Resistance
●
Dynamic dV/dT Rating
●
175°C Operating Temperature
●
Fast Switching
●
Fully Avalanche Rated
●
Repetitive Avalanche Allowed
up toTjmax
●
Lead-Free, RoHS Compliant
●
Automotive Qualified *
GD
S
Gate
Drain
Source
D-Pak
AUIRFR4105
G
D
S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
h
–––
2.2
RθJA
Junction-to-Ambient (PCB mount) **
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
300
68
0.45
± 20
6.8
65
16
5.0
-55 to + 175
Max.
27
g
19
100
20
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
V(BR)DSS
55V
RDS(on) max.
45m
Ω
ID (Silicon Limited)
27Ag
ID (Package Limited)
20A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AUIRFR4105TRR | 20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4105TRL | 20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4105TR | 20 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4620 | 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR4620TRL | 24 A, 200 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRFR4105_11 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Advanced Planar Technology Low On-Resistance |
| AUIRFR4105TR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR4105TRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR4105TRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR4105Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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