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參數(shù)資料
| 型號： | AUIRFR5410TR |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 260K |
| 代理商： | AUIRFR5410TR |
AUIRFR5410
HEXFET Power MOSFET
12/06/10
PD - 96344
AUTOMOTIVE GRADE
GD
S
Gate
Drain
Source
D-Pak
AUIRFR5410
G
D
S
Features
l
Advanced Planar Technology
l
P-Channel MOSFET
l
Low On-Resistance
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to
Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Description
Specifically designed for Automotive applications,
this Cellular Planar design of HEXFET Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETsarewellknownfor,providesthedesigner
with an extremely efficient and reliable device for
use in Automotive and a wide variety of other
applications.
S
D
G
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
V(BR)DSS
-100V
RDS(on) max.
0.205
ID
-13A
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
gj
–––
1.9
RθJA
Junction-to-Ambient (PCB mount)
i
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
-55 to + 150
300
66
0.53
± 20
Max.
-13
-8.2
-52
-5.0
6.3
194
-8.4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AUIRFR5410 | 13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR5410TRR | 13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR5505TRR | 18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFU5505 | 18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| AUIRFR5505TRL | 18 A, 55 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRFR5410TRL | 功能描述:MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR5410TRR | 功能描述:MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR5505 | 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR5505TR | 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFR5505TRL | 功能描述:MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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