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參數資料
| 型號： | AUIRFS3004TRR |
| 元件分類： | JFETs |
| 英文描述： | 195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 287K |
| 代理商： | AUIRFS3004TRR |
08/15/11
www.irf.com
1
HEXFET Power MOSFET
S
D
G
GD
S
Gate
Drain
Source
AUIRFS3004
AUIRFSL3004
D2Pak
AUIRFS3004
TO-262
AUIRFSL3004
VDSS
40V
RDS(on) typ.
1.4m
Ω
max.
1.75m
Ω
ID (Silicon Limited)
340Ac
ID (Package Limited)
195A
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Description
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
D
S
G
PD - 96400
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
EAS (Thermally limited)
Single Pulse Avalanche Energy e
mJ
IAR
Avalanche Currentd
A
EAR
Repetitive Avalanche Energy d
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case kl
–––
0.40
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
j
–––
40
-55 to + 175
± 20
2.5
Max.
340
240
1310
195
°C/W
A
°C
300
See Fig. 14, 15, 22a, 22b
380
4.4
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相關代理商/技術參數 |
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| AUIRFS3006 | 功能描述:MOSFET 60V 270A 2.5 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3006-7P | 功能描述:MOSFET 60V 293A 2.1 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3006-7TRL | 功能描述:MOSFET 60V 293A 2.1 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3006-7TRR | 功能描述:MOSFET 60V 293A 2.1 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3006TRL | 功能描述:MOSFET 60V 270A 2.5 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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