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參數資料
| 型號： | AUIRFS3307ZTRR |
| 元件分類： | JFETs |
| 英文描述： | 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 277K |
| 代理商： | AUIRFS3307ZTRR |
08/16/11
www.irf.com
1
AUIRFS3307Z
AUIRFSL3307Z
HEXFET Power MOSFET
GD
S
Gate
Drain
Source
S
D
G
D2Pak
AUIRFS3307Z
TO-262
AUIRFSL3307Z
VDSS
75V
RDS(on) typ.
4.6m
:
max.
5.8m
:
ID (Silicon Limited)
120Ac
ID (Package Limited)
120A
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Description
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
PD - 96404
S
D
G
D
S
G
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
EAS (Thermally limited)
Single Pulse Avalanche Energy e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case k
–––
0.65
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak j
–––
40
°C
°C/W
A
300
See Fig. 14, 15, 22a, 22b
140
230
6.7
Max.
120
84
480
120
-55 to + 175
± 20
1.5
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| AUIRFS3307ZTRL | 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFSL3307Z | 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
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相關代理商/技術參數 |
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|---|---|
| AUIRFS3607 | 功能描述:MOSFET 75V 80A 9 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3607TRL | 功能描述:MOSFET 75V 80A 9 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3607TRR | 功能描述:MOSFET 75V 80A 9 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3806 | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFS3806 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 60V 43A TO-26 |
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