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參數資料
| 型號： | AUIRFSL3207Z |
| 元件分類： | JFETs |
| 英文描述： | 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 276K |
| 代理商： | AUIRFSL3207Z |
08/16/11
www.irf.com
1
AUIRFS3207Z
AUIRFSL3207Z
HEXFET Power MOSFET
S
D
G
GD
S
Gate
Drain
Source
D2Pak
AUIRFS3207Z
TO-262
AUIRFSL3207Z
VDSS
75V
RDS(on) typ.
3.3m
:
max.
4.1m
:
ID (Silicon Limited)
170A
c
ID (Package Limited)
120A
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Description
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
PD - 96403
S
D
G
D
S
G
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
EAS
Single Pulse Avalanche Energy (Thermally limited)
e
mJ
IAR
Avalanche Currentd
A
EAR
Repetitive Avalanche Energy d
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case k
–––
0.50
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak
j
–––
40
°C/W
A
°C
300
170
See Fig. 14, 15, 22a, 22b
300
16
-55 to + 175
± 20
2.0
Max.
170
120
670
120
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRFSL3307Z | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Advanced Process Technology |
| AUIRFSL4010 | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 100V, 170A, 4.7 MOHM, 143 NC QG, D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N CH 100V 180A TO262 制造商:International Rectifier 功能描述:Automotive MOSFET 10 hm, 143 nC Qg, D2Pak |
| AUIRFSL4010-306 | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 100V, 170A, 4.7 MOHM, 143 NC QG, D2PAK - Rail/Tube |
| AUIRFSL4115 | 功能描述:MOSFET N CH 150V 99A TO262 制造商:infineon technologies 系列:HEXFET? 包裝:管件 零件狀態:有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:150V 電流 - 連續漏極（Id）（25°C 時）:99A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:12.1 毫歐 @ 62A，10V 不同 Id 時的 Vgs（th）（最大值）:5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:120nC @ 10V 不同 Vds 時的輸入電容（Ciss）:5270pF @ 50V 功率 - 最大值:375W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:通孔 封裝/外殼:TO-262-3，長引線，I2Pak，TO-262AA 供應商器件封裝:TO-262 標準包裝:50 |
| AUIRFSL4310 | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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