欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: AUIRFSL4310
元件分類: JFETs
英文描述: 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
文件頁數(shù): 1/13頁
文件大?。?/td> 334K
代理商: AUIRFSL4310
07/20/10
www.irf.com
1
AUIRFS4310
AUIRFSL4310
HEXFET Power MOSFET
S
D
G
PD - 96324
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
GD
S
Gate
Drain
Source
V(BR)DSS
100V
RDS(on) typ.
5.6m
max.
7.0m
ID (Silicon Limited)
130A c
ID (Package Limited)
75A
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
D2Pak
AUIRFS4310
TO-262
AUIRFSL4310
S
D
G
S
D
G
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
mJ
dV/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
0.50
RθJA
Junction-to-Ambient (PCB Mount)
j
–––
40
°C/W
A
°C
300
14
-55 to + 175
± 20
2.0
10lb
xin (1.1Nxm)
300 (1.6mm from case)
980
See Fig. 14, 15, 22a, 22b,
Max.
130
92
550
75
相關(guān)PDF資料
PDF描述
AUIRFS4310TRR 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFS4310TRL 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFS4310 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFSL4410Z 97 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRFS4410ZTRL 97 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRFSL4310-306 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRFSL6535 制造商:IRF 制造商全稱:International Rectifier 功能描述:Advanced Process Technology Low On-Resistance
AUIRFSL8403 制造商:International Rectifier 功能描述: 制造商:International Rectifier 功能描述:MOSFET 40V 120A Q101 TO-26 制造商:International Rectifier 功能描述:MOSFET 40V 120A Q101 TO-262 制造商:International Rectifier 功能描述:MOSFET, 40V, 120A, Q101, TO-262 制造商:International Rectifier 功能描述:MOSFET, 40V, 120A, Q101, TO-262, Transistor Polarity:N Channel, Continuous Drain 制造商:International Rectifier 功能描述:MOSFET, 40V, 120A, Q101, TO-262, Transistor Polarity:N Channel, Continuous Drain Current Id:123A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0026ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power 制造商:International Rectifier 功能描述:MOSFET N-Ch HEXFET 40V 123A Auto TO-262
AUIRFSL8405 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET 40V 120A Q101 TO-26 制造商:International Rectifier 功能描述:MOSFET 40V 120A Q101 TO-262 制造商:International Rectifier 功能描述:MOSFET, 40V, 120A, Q101, TO-262 制造商:International Rectifier 功能描述:MOSFET Auto 40V N-Ch FET 1.9mOhm 120A 制造商:International Rectifier 功能描述:MOSFET, 40V, 120A, Q101, TO-262, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0019ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power 制造商:International Rectifier 功能描述:MOSFET N-Ch 40V 193A Automotive TO-262
AUIRFSL8407 制造商:International Rectifier 功能描述:AUTOMOTIVE G12.7 MOSFET 40VN - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET 40V 195A Q101 TO-262 制造商:International Rectifier 功能描述:MOSFET, 40V, 195A, Q101, TO-262 制造商:International Rectifier 功能描述:MOSFET, 40V, 195A, Q101, TO-262, Transistor Polarity:N Channel, Continuous Drain Current Id:195A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0014ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power 制造商:International Rectifier 功能描述:MOSFET N-Ch 40V 250A Automotive TO-262
主站蜘蛛池模板: 黄梅县| 黔西| 丁青县| 兴海县| 台北市| 绍兴市| 万载县| 武邑县| 合水县| 林州市| 大洼县| 合山市| 五大连池市| 杨浦区| 林芝县| 安阳市| 凤庆县| 昌平区| 荆州市| 夏河县| 乌审旗| 无棣县| 嘉黎县| 玛多县| 昌都县| 古浪县| 乌兰县| 横山县| 裕民县| 长白| 五家渠市| 洪江市| 邵阳市| 桓台县| 张家港市| 镇康县| 德清县| 鸡东县| 金昌市| 淮安市| 永定县|