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參數資料
| 型號： | AUIRFU120Z |
| 元件分類： | JFETs |
| 英文描述： | 8.7 A, 100 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, IPAK-3 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 309K |
| 代理商： | AUIRFU120Z |
AUIRFR120Z
AUIRFU120Z
HEXFET Power MOSFET
12/06/10
www.irf.com
1
AUTOMOTIVE MOSFET
S
D
G
D-Pak
AUIRFR120Z
GD
S
Gate
Drain
Source
D
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliabledeviceforuseinAutomotiveapplicationsandawide
variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
100V
RDS(on) typ.
150m
max.
190m
ID
8.7A
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy(Thermally limited)
d
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
4.28
RθJA
Junction-to-Ambient (PCB mount)
i
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
20
18
See Fig.12a, 12b, 15, 16
35
0.23
± 20
Max.
8.7
6.1
35
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
I-Pak
AUIRFU120Z
S
D
G
S
D
G
D
PD - 96345
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