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參數資料
| 型號： | AUIRFZ44N |
| 元件分類： | JFETs |
| 英文描述： | 49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/11頁 |
| 文件大?。?/td> | 174K |
| 代理商： | AUIRFZ44N |
AUIRFZ44N
HEXFET Power MOSFET
06/22/11
www.irf.com
1
S
D
G
AUTOMOTIVE GRADE
l
Advanced Planar Technology
l
Low On-Resistance
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Features
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*
Qualification standards can be found at http://www.irf.com/
GD
S
Gate
Drain
Source
TO-220AB
AUIRFZ44N
D
S
D
G
V(BR)DSS
55V
RDS(on) max.
17.5m
Ω
ID
49A
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally Limited)
Single Pulse Avalanche Energy
h
EAS (tested)
Single Pulse Avalanche Energy Tested Value
g
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.5
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
mJ
530
°C/W
94
Max.
49
35
160
0.63
±20
5.0
9.4
10 lbf
yin (1.1Nym)
300 (1.6mm from case )
150
25
-55 to + 175
PD - 96378
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AUIRFZ44N | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 49A TO-22 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 55V, 49A, TO-220AB |
| AUIRFZ44NL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE GRADE |
| AUIRFZ44NS | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFZ44NS | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 49A TO-26 |
| AUIRFZ44NSTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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