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參數資料
| 型號： | AUIRFZ48ZSTRR |
| 元件分類： | JFETs |
| 英文描述： | 61 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 252K |
| 代理商： | AUIRFZ48ZSTRR |
06/21/11
www.irf.com
1
AUIRFZ48Z
AUIRFZ48ZS
HEXFET Power MOSFET
AUTOMOTIVE GRADE
PD - 97612A
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up
to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
D
S
Gate
Drain
Source
D2Pak
AUIRFZ48ZS
S
D
G
D
TO-220AB
AUIRFZ48Z
S
D
G
D
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
55V
RDS(on) max.
11mΩ
ID
61A
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
i
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
h
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
1.64
°C/W
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
j
–––
40
10 lbfin (1.1Nm)
91
0.61
± 20
73
120
See Fig.12a,12b,15,16
300
-55 to + 175
7.2
Max.
61
43
240
相關PDF資料 |
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|---|---|
| AUIRFZ48Z | 61 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AUIRFZ48ZSTRL | 61 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRG4BC30USTRL | 23 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| AUIRG4BC30USTRR | 23 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| AUIRG4BC30U-S | 23 A, 600 V, N-CHANNEL IGBT, TO-263AB |
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