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參數資料
| 型號： | AUIRGS30B60KTRR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 78 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 305K |
| 代理商： | AUIRGS30B60KTRR |
INSULATED GATE BIPOLAR TRANSISTOR
10/14/10
www.irf.com
1
AUIRGS30B60K
AUIRGSL30B60K
VCES = 600V
IC = 50A, TC=100°C
at TJ=175°C
tsc > 10s, TJ=150°C
VCE(on) typ. = 1.95V
Features
Low VCE(on) Non Punch Through IGBT Technology
10s Short Circuit Capability
Square RBSOA
Positive VCE(on) Temperature Coefficient
Maximum Junction Temperature rated at 175°C
Lead-Free, RoHS Compliant
Automotive Qualified *
Benefits
Benchmark Efficiency for Motor Control
Rugged Transient Performance
Low EMI
Excellent Current Sharing in Parallel Operation
E
C
G
n-channel
* RθJC (end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C
and is accounted for by the physical wearout of the die attach medium.
AUTOMOTIVE GRADE
D2Pak
AUIRGS30B60K
TO-262
AUIRGSL30B60K
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. These are stress ratings only; and functional operation of the device at these or any other condition
beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified
GC
E
Gate
Collector
Emitter
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
78
IC @ TC = 100°C Continuous Collector Current
50
A
ICM
Pulse Collector Current (Ref.Fig.C.T.5)
120
ILM
Clamped Inductive Load current
120
VISOL
RMS Isolation Voltage, Terminal to Case, t=1 min.
2500
V
VGE
Gate-to-Emitter Voltage
±20
PD @ TC = 25°C
Maximum Power Dissipation
370
W
PD @ TC = 100°C Maximum Power Dissipation
180
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case- IGBT
–––
0.41*
RθCS
Case-to-Sink, flat, greased surface
–––
0.50
–––
RθJA
Junction-to-Ambient (PCB Mount, Steady State)
d –––
–––
40
Wt
Weight
–––
1.44
–––
g
°C/W
PD - 96334
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| AUIRGS30B60KTRL | 78 A, 600 V, N-CHANNEL IGBT, TO-263AB |
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| AUIRGSL30B60K | 功能描述:IGBT 晶體管 600V AUTO ULTRAFAST 10-30 KHZ IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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