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參數(shù)資料
| 型號： | AUIRL3705N |
| 元件分類： | JFETs |
| 英文描述： | 89 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 1024K |
| 代理商： | AUIRL3705N |
AUIRL3705N
www.irf.com
1
01/19/11
HEXFET Power MOSFET
AUTOMOTIVE GRADE
l
Advanced Planar Technology
l
Logic-Level Gate Drive
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Features
Specifically designed for Automotive applications, this
Cellular design of HEXFET Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
GD
S
Gate
Drain
Source
TO-220AB
AUIRL3705N
D
S
D
G
S
D
G
V(BR)DSS
55V
RDS(on) max.
0.01
ID
89A
g
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.90
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
°C/W
-55 to + 175
10 lbf
yin (1.1Nym)
300 (1.6mm from case )
101
±16
5.0
17
340
46
170
Max.
89
g
63
310
PD - 96352
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| AUIRL3705ZSTRR | 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRL3705N | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 89A TO-22 |
| AUIRL3705Z | 功能描述:MOSFET 55V, 86A, 12mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRL3705ZL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRL3705ZS | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRL3705ZSTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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