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參數(shù)資料
| 型號： | AV1015 |
| 廠商： | Avic Technology |
| 英文描述： | TO-92 Plastic-Encapsulate Transistors |
| 中文描述： | 至92塑料封裝晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 336K |
| 代理商： | AV1015 |
@vic
AV1015
TO-92 Plastic-Encapsulate Transistors
AV1015
TRANSISTOR PNP
FEATURES
Power dissipation
P
CM
: 0.4 W
Collector current
I
CM
: -0.15 A
Collector-base voltage
V
(BR)CBO
: -50 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= -100
A
I
E
=0
-50
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= -0. 1 mA
I
B
=0
-50
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -100
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
= -50 V I
E
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= -5 V I
C
=0
-0.1
A
DC current gain
h
FE 1
V
CE
= -6 V, I
C
= -2mA
70
400
Collector-emitter saturation voltage
V
CE
(sat)
I
C
= -100mA, I
B
= -10
mA
I
C
=
-100
-10mA
-0.3
V
Base-emitter saturation voltage
V
BE
(sat)
mA,
I
B
=
-1.1
V
Transition frequency
f
T
V
CE
= -10 V, I
C
= -1 mA
f =30
MHz
80
MHz
CLASSIFICATION OF h
FE(1)
Rank
O
Y
GR
Range
70-140
120-240
200-400
1
2
3
TO
92
1.EMITTER
2.COLLECTOR
3.BASE
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