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參數資料
| 型號： | AV966 |
| 廠商： | Avic Technology |
| 英文描述： | TO-92MOD Plastic-Encapsulate Transistors |
| 中文描述： | 到92MOD塑料封裝晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 279K |
| 代理商： | AV966 |
@vic
AV966
TO-92MOD Plastic-Encapsulate Transistors
AV966
TRANSISTOR PNP
FEATURE
Power dissipation
P
CM
: 0.9 W
Collector current
I
CM
: -1.5 A
Collector-base voltage
V
(BR)CBO
: -30 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= -1mA
I
E
=0
-30
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= -10 mA , I
B
=0
-30
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -1mA I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
= -30 V , I
E
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= -5V , I
C
=0
-0.1
A
DC current gain
h
FE 1
V
CE
=-2 V, I
C
= -500mA
100
320
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -1.5 A, I
B
= -0.03A
-2
V
Base-emitter voltage
V
BE
I
C
= -500 mA, V
CE
= -2V
-1
V
Transition frequency
f
T
V
CE
= -2 V, I
C
= -500mA
100
MHz
CLASSIFICATION OF h
FE
(1)
Rank
O
Y
Range
100-200
160-320
1.EMITTER
2.COLLECTOR
3.BASE
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