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參數(shù)資料
型號(hào): AWC6312RM9P9
廠商: ANADIGICS INC
元件分類(lèi): 放大器
英文描述: 1850 MHz - 1915 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M9, SURFACE MOUNT PACKAGE-8
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 386K
代理商: AWC6312RM9P9
01/2009
AWC6312R
HELP3TM PCS CDMA 3.4V/28dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.0
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
Figure 1: Block Diagram
FEATURES
InGaP HBT Technology
High Efficiency:
40 % @ +28 dBm output
23 % @ +16 dBm output
Low Quiescent Current: 8 mA
Low Leakage Current in Shutdown Mode: <1 A
Internal Voltage Regulation (no need for DC/DC
Converter
Optimized for a 50 System
Low Profile Miniature Surface Mount Package:
1 mm
CDMA 1XRTT, 1xEV-DO Compliant
RoHS-Compliant Package, 250 oC MSL-3
AWC6312R
APPLICATIONS
CDMA/EVDO PCS-Band Wireless Handsets and
Data Devices
PRODUCT DESCRIPTION
The AWC6312R meets the increasing demands
for higher efficiency and smaller footprint in CDMA
1X handsets. The AWC6312R uses ANADIGICS’
exclusive InGaP-Plus technology, which combines
HBT and pHEMT devices on the same die, to enable
state-of-the-art reliability, temperature stability, and
ruggedness. The AWC6312R is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP) family of
CDMA power amplifiers, which deliver low quiescent
currents and significantly greater efficiency without
a costly external DAC or DC-DC converter. Through
selectable bias modes, the AWC6312R achieves
optimal efficiency across different output power
levels, specifically at low- and mid-range power levels
where the PA typically operates, thereby dramatically
increasing handset talk-time and standby-time. Its
built-in voltage regulator eliminates the need for
external voltage regulation components. The 3 mm x
3 mm x 1 mm surface mount package incorporates
matching networks optimized for output power,
efficiency, and linearity in a 50 system.
Bias Control
VBATT
VEN
RFIN
RFOUT
GND
VMODE
1
7
5
8
6
GND at slug (pad)
3
4
2
VCC
GND
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相關(guān)代理商/技術(shù)參數(shù)
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