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參數資料
| 型號： | AWT6276RM20P9 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, 1 MM HEIGHT, ROHS COMPLIANT, MINIATURE, M-20, 10 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 413K |
| 代理商： | AWT6276RM20P9 |
11/2008
AWT6276
HELPTM PCS/WCDMA 3.4 V/29.5 dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.1
M20 Package
10 Pin 4 mm x 4 mm x 1 mm
Surface Mount Module
Figure 1: Block Diagram
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1 mm surface mount
package incorporates matching networks optimized for
output power, efficiency, and linearity in a 50 system.
FEATURES
InGaP HBT Technology
High Efficiency:
45 % @ POUT = +29.5 dBm
21 % @ POUT = +16 dBm
16 % @ POUT = +7 dBm
Low Quiescent Current: 15 mA
Low Leakage Current in Shutdown Mode: <1 A
VREF = +2.85 V (+2.75 V min over temp)
Optimized for a 50 System
Low Profile Miniature Surface Mount Package
RoHS Compliant Package, 250 oC MSL-3
HSPA Compliant (no backoff)
APPLICATIONS
WCDMA/HSPA PCS-Band Wireless Handsets
and Data Devices
PRODUCT DESCRIPTION
The AWT6276 meets the increasing demands for
higher output power in UMTS handsets. The PA
module is optimized for VREF = +2.85 V, a requirement for
compatibility with the Qualcomm 6275 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
AWT6276R
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
VCC
GND
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相關代理商/技術參數 |
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| AWT6277R | 制造商:ANADIGICS 制造商全稱:ANADIGICS, Inc 功能描述:HELPTM IMT/WCDMA 3.4 V/28.5 dBm Linear Power Amplifier Module |
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| AWT6277RM20P9 | 制造商:ANADIGICS 制造商全稱:ANADIGICS, Inc 功能描述:HELPTM IMT/WCDMA 3.4 V/28.5 dBm Linear Power Amplifier Module |
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