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參數資料
| 型號： | AWT919D |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁數： | 1/7頁 |
| 文件大小： | 70K |
| 代理商： | AWT919D |
This data sheet contains technical information about product ANADIGICS is planning to introduce. The data and product specifications
are subject to change prior to formal introduction. Please note : This device is NOT to be used for device qualification or production.
3
5 Technology Drive, Warren NJ 07059
(908)-668-5000
FAX:(908)-668-5132 Email: mkt@anadigics.com, 06/07/98-AWT919d
1
AWT919D
TX POWER MMIC
Advanced Product Information
REV: 1
900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC
DESCRIPTION:
The AWT919D is a highly
integrated GaAs monolithic
Power Amplifier suited for both
824 - 849 MHz AMPS/DAMPS and
1850 - 1910 MHz TDMA/CDMA
dual band handset applications.
FEATURES:
High Output Power
High Efficiency
Low Distortion
28 Pin SOIC Plastic Package
Surface Mount Package
Low Cost
BIAS CONTROL CIRCUIT
VDB
VSS
Power
Control
VREF_A
VREF_B
RFIN_A
RFIN_B
VD1_B
VD2_B
VD3_B
VD2_A
VD1_A
RFOUT_A
RFOUT_B
MATCH
MATCH
MATCH
MATCH
MATCH
MAX. RATING
PIN
SIGNAL
MAX.
RATING
PIN
SIGNAL
MAX.
RATING
3
V
DD1A
7.0 V
DC
, 0 V
DC
10
RF
INB
10 dBm
5
V
DB
7.0 V
DC
, 0 V
DC
12
V
DD1B
7.0 V
DC
, 0 V
DC
6
RF
INA
10 dBm
15
V
DD2B
7.0 V
DC
, 0 V
DC
7
V
REFA
7.0 V
DC
, 0 V
DC
20, 21
V
D3
/RF
OUTB
7.0 V
DC
, 0 V
DC
8
V
SS
- 6 (*)
22, 23
V
DD2A
/ RF
OUTA
7.0 V
DC
, 0 V
DC
9
V
REFB
7.0 V
DC
, 0 V
DC
(*) Negative voltage of - 3.5 V at least must be presented at this pin
Operating Temperature: - 20
C to 70
C
Storage Temperature: - 55
C to 100
0
C
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